Self-amplified photo-induced gap quenching in a correlated electron material

نویسندگان

  • S Mathias
  • S Eich
  • J Urbancic
  • S Michael
  • A V Carr
  • S Emmerich
  • A Stange
  • T Popmintchev
  • T Rohwer
  • M Wiesenmayer
  • A Ruffing
  • S Jakobs
  • S Hellmann
  • P Matyba
  • C Chen
  • L Kipp
  • M Bauer
  • H C Kapteyn
  • H C Schneider
  • K Rossnagel
  • M M Murnane
  • M Aeschlimann
چکیده

Capturing the dynamic electronic band structure of a correlated material presents a powerful capability for uncovering the complex couplings between the electronic and structural degrees of freedom. When combined with ultrafast laser excitation, new phases of matter can result, since far-from-equilibrium excited states are instantaneously populated. Here, we elucidate a general relation between ultrafast non-equilibrium electron dynamics and the size of the characteristic energy gap in a correlated electron material. We show that carrier multiplication via impact ionization can be one of the most important processes in a gapped material, and that the speed of carrier multiplication critically depends on the size of the energy gap. In the case of the charge-density wave material 1T-TiSe2, our data indicate that carrier multiplication and gap dynamics mutually amplify each other, which explains-on a microscopic level-the extremely fast response of this material to ultrafast optical excitation.

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عنوان ژورنال:

دوره 7  شماره 

صفحات  -

تاریخ انتشار 2016